Seed crystal and method of manufacturing single crystal
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United States of America Patent
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Jan 9, 2001
Grant Date -
N/A
app pub date -
Feb 17, 1999
filing date -
Feb 18, 1998
priority date (Note) -
Expired
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Abstract
A seed crystal 1 for manufacturing a single crystal incorporating an unconformity portion B formed at a predetermined position apart from a leading end thereof and structured to conduct the heat of melt and interrupt propagation of dislocation caused from thermal stress produced when dipping in the melt has been performed.
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