Method for preparing oxide single crystalline materials
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United States of America Patent
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Jan 9, 2001
Grant Date -
N/A
app pub date -
Mar 19, 1999
filing date -
Mar 20, 1998
priority date (Note) -
Expired
status (Latency Note)
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Abstract
There is provided a method for preparing a large and perfect oxide crystal useful for oxide superconductors and laser transmitting elements. In the present method for preparing a large oxide single crystalline material such as superconductive crystals of RE123, a crystal precursor material is supercooled prior to the solidification thereof in the course of crystal growth of the oxide by a supercooling solidification process, followed by subjecting said precursor material to continuous slow heating while keeping the supercooled condition to promote crystal growth, as shown in FIG. 7. Seed crystals may be added to the crystal precursor material prior to solidification, if necessary, as also shown in FIG. 7.
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