Semiconductor material characterizing method and apparatus
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United States of America Patent
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Dec 19, 2000
Grant Date -
N/A
app pub date -
Nov 4, 1999
filing date -
Sep 14, 1998
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A method and apparatus are provided for determining the doping concentration profile of a specimen of semiconductor material. The apparatus includes a sensor assembly having a sensor tip which is mounted on an air bearing assembly. The air bearing assembly is suspended from a housing by a pair of bellows. In use, air is supplied to the air bearing assembly through the bellows causing the bellows to expand, lowering the sensor tip until the air bearing action stops the expansion. In other implementations of the invention, photocurrent or photovoltage are not used and the doping concentration profile is determined using the total capacitance, the capacitance of air, the DC bias voltage and the area of the electrode spaced from the specimen information.
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