Performance matrix, method of making an active matrix displays incorporating an improved TFT
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United States of America Patent
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Dec 12, 2000
Issued Date -
N/A
app pub date -
Jan 26, 1998
filing date -
Mar 27, 1996
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Abstract
Improved multilayer matrix line including inverted gate thin film matrix transistors to reduce defects in and enhance performance of matrix devices incorporating the transistors, including active matrix displays. The inverted gate line is formed in a multilayer metal structure deposited sequentially before patterning of a first bottom refractory layer, an aluminum layer and a second refractory layer for the gate structure. The aluminum layer is anodized adjacent the gate to prevent step coverage problems. A further improvement is provided when forming an active matrix display storage capacitor utilizing the multilayer gate structure.
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