Apparatus and process for measuring the temperature of semiconductor wafers in the presence of radiation absorbing gases
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United States of America Patent
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Dec 12, 2000
Issued Date -
N/A
app pub date -
Mar 7, 2000
filing date -
Jun 8, 1998
priority date (Note) -
Expired
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Abstract
An apparatus and method for determining the temperature of a semiconductor wafer in a thermal processing chamber in the presence of a radiation absorbing gas, such as a vapor, is disclosed. The apparatus includes a temperature sensing device which senses the amount of electromagnetic radiation being emitted by a wafer being heated and a gas sensing device which senses the amount of a gas present within the chamber. The system further includes a controller which is placed in communication with the temperature sensing device and the gas sensing device. The controller is configured to determine a correction factor based upon the amount of gas contained within the chamber. The correction factor in combination with information received from the temperature sensing device are then used to determine the temperature of the wafer.
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