Method for producing semiconductor device and production apparatus of semiconductor device
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Dec 12, 2000
Grant Date -
N/A
app pub date -
Mar 29, 1996
filing date -
Mar 30, 1995
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
In a RTP (rapid Thermal Processing) of a large-diameter semiconductor wafer using a hot-wall type heating furnace, the temperature distribution of the wafer surface is made uniform by means of preliminarily heating a thermal storage plate(s) to a heat-treating temperature, and, then positioning the wafer between a pair of the thermal storage plates or in the direct proximity of a thermal storage plate. The wafer may be brought into contact with the thermal storage plate. The wafer is thus heated rapidly heated to the heat treating temperature.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully