Cathode structure for reduced emission and robust handling properties
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United States of America Patent
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Nov 14, 2000
Issued Date -
N/A
app pub date -
May 18, 1998
filing date -
Nov 21, 1996
priority date (Note) -
Expired
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Abstract
A photocathode device for use in an image intensifier, fabricated with a photoemissive semiconductor wafer having an active cathode layer which includes a central region of a first predetermined height surrounded by a peripheral region of a second predetermined height. The first predetermined height of the central region is configured to be greater than the second predetermined height of the peripheral region in order to create a recessed contact structure which is less likely to have unwanted emission points. A layer of conductive material covers the peripheral region to provide an electrical contact to the photocathode device. A layer of insulating material covers the layer of conductive material in order to protect the contact layer from being damage during handling operations.
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