Process for producing a carbon film on a substrate
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United States of America Patent
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Oct 24, 2000
Grant Date -
N/A
app pub date -
Jul 8, 1999
filing date -
Jul 9, 1998
priority date (Note) -
Expired
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Abstract
In order to process a carbon film carbon is deposited on a substrate by sputtering from a carbon sputter target in a gas mixture which contains nitrogen in a minimum proportion of 20% and a sputter gas at a predetermined gas pressure and the substrate is then subjected under a high vacuum to thermal treatment at a temperature above 100.degree. C. The carbon films produced in this manner comprise a fiber and/or tube structure which extends substantially perpendicular to the film.
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