Semiconductor bridge device and method of making the same
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Oct 17, 2000
Grant Date -
N/A
app pub date -
May 9, 1996
filing date -
May 9, 1996
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A device, e.g., an explosive-initiation device (24) includes a semiconductor bridge device (10) comprising semiconductor pads (14a, 14b) separated by an initiator bridge (14c) and having metallized lands (16a, 16b) disposed over the pads (14a, 14b). The metallized lands (16a, 16b) each comprise a titanium base layer (18), a titanium-tungsten intermediate layer (20) and a tungsten top layer (22). This multilayer construction is simple to apply, provides good adhesion to the semiconductor (14) and enhanced semiconductor bridge characteristics, and avoids the electromigration problems attendant upon use of aluminum metallized lands under severe conditions of no-fire tests and very low firing voltage or current levels. The semiconductor (14) may optionally be covered by a cap or cover (117) of a stratified metal layer similar or identical to the metallized lands (16a, 16b). A method of making the semiconductor bridge devices includes metal sputtering of titanium, then titanium plus tungsten and then tungsten onto an appropriately masked semiconductor surface to attain the multilayer metallized lands (16a, 16b) and/or cover (117) of the invention.
First Claim
Family
International Classification(s)
- No Non-US Classification to display
Cited Art Landscape
Patent Citation Ranking
- No Patent Citation Ranking to display
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully