Electrode of n-type nitridide semiconductor, semiconductor device having the electrode, and method of fabricating the same
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United States of America Patent
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Oct 10, 2000
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N/A
app pub date -
Jul 10, 1998
filing date -
Jul 16, 1997
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Abstract
The present invention provides an electrode making good ohmic contact with an n-type nitride semiconductor without requiring heat treatment at high temperature, wherein an aluminum layer, a silicon layer, a nickel layer and a gold layer are laminated in this order on an n-type gallium nitride based semiconductor, to form an n-type electrode.
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