CMOS compatible integrated pressure sensor
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United States of America Patent
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Sep 26, 2000
Grant Date -
N/A
app pub date -
Oct 14, 1998
filing date -
Nov 25, 1997
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Abstract
A pressure sensor fabricated onto a substrate using conventional CMOS fabrication processes. The pressure sensor is built on a substrate having a first conductivity type and has defined in it a well of an opposite conductivity type. This well defines a membrane. Resistors are diffused into the well. Source/drain regions are provided for leadouts for the resistors. An n-cap is provided for the resistors. Metalization contacts may be provided to connect the membrane to a positive bias during a membrane etching process. A cavity is provided on the underside of the substrate through which pressure is applied to the membrane. Signal conditioning circuitry, such as an operational amplifier, may also be fabricated on the same substrate preferably using the same IC processes.
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