Intrinsic p-type HgCdTe using CdTe capping layer
Number of patents in Portfolio can not be more than 2000
United States of America Patent
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Sep 5, 2000
Issued Date -
N/A
app pub date -
Sep 28, 1999
filing date -
Aug 13, 1993
priority date (Note) -
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Abstract
A hybrid focal plane array has Hg.sub.1-x Cd.sub.x Te junction photodiodes formed in a substrate of HgCdTe which is capped by a layer of Te-rich CdTe. Type conversion of a low metal vacancy HgCdTe substrate to p-type is performed by annealing the capped substrate at a temperature sufficient to support interdiffusion between the Te-rich CdTe capping layer and the HgCdTe substrate. Use of the CdTe capping layer with a slight excess Te maintains the surface of the HgCdTe substrate in a Te-rich phase condition.
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- 15 United States
- 10 France
- 8 Japan
- 7 China
- 5 Korea
- 2 Other
Patent Owner(s)
Patent Owner | Address | |
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DRS RSTA INC | 13544 NORTH CENTRAL EXPRESSWAY DALLAS TX 75243 |
International Classification(s)
Inventor(s)
Inventor Name | Address | # of filed Patents | Total Citations |
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Tregilgas, John Harold | Richardson, TX | 3 | 22 |
# of filed Patents : 3 Total Citations : 22 | |||
Turner, Arthur Monroe | Allen, TX | 38 | 306 |
# of filed Patents : 38 Total Citations : 306 |
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- 3 Citation Count
- H01L Class
- 1.34 % this patent is cited more than
- 25 Age
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Maintenance Fees
Fee | Large entity fee | small entity fee | micro entity fee | due date |
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Fee | Large entity fee | small entity fee | micro entity fee |
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Surcharge after expiration - Late payment is unavoidable | $700.00 | $350.00 | $175.00 |
Surcharge after expiration - Late payment is unintentional | $1,640.00 | $820.00 | $410.00 |
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