Intrinsic p-type HgCdTe using CdTe capping layer

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 6114738
SERIAL NO

09406821

Stats

ATTORNEY / AGENT: (SPONSORED)

Importance

Loading Importance Indicators... loading....

Abstract

See full text

A hybrid focal plane array has Hg.sub.1-x Cd.sub.x Te junction photodiodes formed in a substrate of HgCdTe which is capped by a layer of Te-rich CdTe. Type conversion of a low metal vacancy HgCdTe substrate to p-type is performed by annealing the capped substrate at a temperature sufficient to support interdiffusion between the Te-rich CdTe capping layer and the HgCdTe substrate. Use of the CdTe capping layer with a slight excess Te maintains the surface of the HgCdTe substrate in a Te-rich phase condition.

First Claim

See full text

Other Claims data not available

Family

Loading Family data... loading....

Patent Owner(s)

Patent OwnerAddress
DRS RSTA INC13544 NORTH CENTRAL EXPRESSWAY DALLAS TX 75243

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Tregilgas, John Harold Richardson, TX 3 22
Turner, Arthur Monroe Allen, TX 38 306

Cited Art Landscape

Load Citation

Patent Citation Ranking

  • 3 Citation Count
  • H01L Class
  • 1.34 % this patent is cited more than
  • 25 Age
Citation count rangeNumber of patents cited in rangeNumber of patents cited in various citation count ranges22680432207109633720171582901 - 1011 - 2021 - 3031 - 4041 - 5051 - 6061 - 7071 - 8081 - 9091 - 100100 +050100150200250300350400450500550600650700750

Forward Cite Landscape

Load Citation