Method of fine feature edge tuning with optically-halftoned mask

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United States of America Patent

PATENT NO 6114071
SERIAL NO

09055355

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Abstract

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A photolithography mask for optically transferring a lithographic pattern corresponding to an integrated circuit from the mask onto a semiconductor substrate by use of an optical exposure tool. The mask comprises a plurality of features corresponding to elements forming the integrated circuit, and a plurality of non-resolvable biasing segments disposed on an edge of at least one of the features.

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Patent Owner(s)

Patent OwnerAddress
ASML NETHERLANDS B V5500 AH VELDHOVEN

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, J Fung Cupertino, CA 9 558
Laidig, Tom Point Richmond, CA 3 277
Wampler, Kurt E Sunnyvale, CA 26 1125

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Patent Citation Ranking

  • 237 Citation Count
  • G03F Class
  • 98.11 % this patent is cited more than
  • 25 Age
Citation count rangeNumber of patents cited in rangeNumber of patents cited in various citation count ranges34524176522201 - 1011 - 2021 - 3031 - 4041 - 5051 - 6061 - 7071 - 8002.557.51012.51517.52022.52527.53032.53537.54042.54547.5

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