Flip-chip connection type semiconductor integrated circuit device
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United States of America Patent
Stats
-
Aug 29, 2000
Grant Date -
N/A
app pub date -
Jan 16, 1997
filing date -
Jan 18, 1996
priority date (Note) -
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status (Latency Note)
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Abstract
A first insulating film is formed on an integrated circuit chip on which an I/O pad is formed. A first opening portion is formed above the I/O pad. A conductive layer and a barrier metal layer which are electrically connected to the I/O pad through the first opening portion are stacked on the first insulating film. The conductive layer and the barrier metal layer are patterned by a single mask. A second insulating film is formed on the resultant structure. A second opening portion is formed in the second insulating film at a position different from that of the first opening portion. A solder bump or metal pad is formed on the barrier metal layer in the second opening portion. The position of the solder bump or metal pad is defined by the second opening portion.
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