Process for forming front-back through contacts in micro-integrated electronic devices
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United States of America Patent
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Aug 29, 2000
Grant Date -
N/A
app pub date -
Nov 25, 1998
filing date -
Nov 26, 1997
priority date (Note) -
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Abstract
The process comprises the steps of: forming a through hole from the back of a semiconductor material body; forming a hole insulating layer of electrically isolating material laterally covering the walls of the through hole; forming a through contact region of conductive material laterally covering the hole insulating layer inside the hole and having at least one portion extending on top of the lower surface of the body; forming a protective layer covering the through contact region; and forming a connection structure extending on top of the upper surface of the body between and in electrical contact with the through contact region and the electronic component.
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