Process for the fabrication of epitaxial layers of a compound semiconductor on monocrystal silicon and light-emitting diode fabricated therefrom
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United States of America Patent
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Aug 29, 2000
Grant Date -
N/A
app pub date -
Apr 14, 1998
filing date -
Apr 15, 1997
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Expired
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Abstract
A process for the fabrication on a monocrystal silicon substrate of epitaxial layers of a III-V nitride compound semi-conductor having the structure In.sub.x Al.sub.y Ga.sub.1-x-y N (0.ltoreq.x, 0.ltoreq.y, x+y.ltoreq.1). The process consists of the following steps. A parcel-like structure is created on the surface of a monocrystal silicon substrate. The silicon surface within the parcels is uncovered and the edges of the parcels are covered by a masking material. By means of epitaxial growth of the nitride compound semiconductor exclusively within the parcels on the silicon surface, local islands are created on whose edges the dislocations generated by the lattice mismatches are able to break down. Finally, components are fabricated in and on the parcels.
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