Load actuating semiconductor circuit having a thermally resistive member
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United States of America Patent
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-
Aug 22, 2000
Grant Date -
N/A
app pub date -
Dec 30, 1997
filing date -
Jan 22, 1997
priority date (Note) -
Expired
status (Latency Note)
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Abstract
An intelligence power device (IPD), having a temperature-sensitive and heat-damage protecting function, is used as a semiconductor relay which controls load current supplied to an electric load. A target sensitive temperature T.sub.SD of IPD is determined according to an allowable load current value, using an equation T.sub.SD =I.sup.2 .times.R.sub.ON .times.R.sub.TEMP +T.sub.ROOM, where I represents an allowable load current value, R.sub.ON represents an on-resistance value of a power MOSFET, R.sub.TEMP represents a thermal resistance value of an entire radiation system of IPD, and T.sub.ROOM represents an ambient temperature of IPD. When the load current exceeds the allowable load current value, IPD stops the load current so that the load circuit can be prevented from being subjected to excessively large current.
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