Method for depositing a low-resistivity titanium-oxynitride (TiON) film that provides for good texture of a subsequently deposited conductor layer
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United States of America Patent
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Aug 22, 2000
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N/A
app pub date -
Jun 18, 1997
filing date -
Jun 18, 1997
priority date (Note) -
Expired
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Abstract
A method of minimizing intragranular oxidation of TiON and providing a low resistivity film that provides for highly textured metal overlayers. The method provides an in situ diffusion barrier for subsequent high temperature metal deposition or processes. An in situ process eliminates the need for a fortification anneal immediately following the barrier deposition, thus reducing the number of metal processing steps and providing for a more economical process or for subsequent high temperature metal deposition. The surface properties of the TiON allow for improved texture in those metal overlayers as well as low diffusion barrier resistivity.
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