Process for passivating a silicon carbide surface against oxygen
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Aug 22, 2000
Grant Date -
N/A
app pub date -
Dec 18, 1997
filing date -
Apr 13, 1995
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
In the manufacture of semiconductor components, a SiC single crystal is exposed, during storage or transport between two process steps, to an oxygen-containing gas atmosphere, for example air. In order to prevent an oxide coating from forming on the SiC surface of the SiC single crystal, a carbon coating which does not react chemically with oxygen, preferably a graphite coating, is produced on said SiC surface.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully