Method of obtaining a thin film of semiconductor material
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United States of America Patent
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Aug 15, 2000
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app pub date -
Apr 11, 1997
filing date -
Apr 11, 1996
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Abstract
A method of obtaining a thin film from a substrate made of semiconductor material, the thin film including at least one element on one face of the substrate made of a material different from the semiconductor material, and conferring to the thin film a heterogeneous structure. The method includes implantation by bombardment of the face of said substrate and said element by ions to produce gaseous microbubbles within the volume of the substrate, and to produce a continuous zone of microbubbles within said element to demarcate a region of small thickness on the side of said face of the substrate containing said element, and a region of greater thickness formed by the rest of the substrate; the ions being chosen from among the ions of rare gases or of hydrogen gas and the temperature of the substrate being kept below the temperature at which the gas generated by the implanted ions is able to escape from the semiconductor diffusion, and; a separation of the two regions situated on each side of the zone of gaseous microbubbles, by a crystalline rearrangement effect in the substrate and the effect of microbubble pressure, whereby the region of small thickness constitutes a thin film.
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