Thin-film transistor and method of manufacturing the same
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United States of America Patent
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Aug 15, 2000
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N/A
app pub date -
Jan 11, 1999
filing date -
Feb 22, 1993
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Abstract
A thin-film transistor (3, 5a, 5b and 5c) is covered with a first silicon nitride film (9) formed by an LPCVD method. A first silicon oxide film (6) is formed on the first silicon nitride film (9). A silicon nitride film (7), i.e., passivation film which is formed by a plasma CVD method is provided on the first silicon oxide film (6).
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