Plasma processing apparatus
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United States of America Patent
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Aug 15, 2000
Grant Date -
N/A
app pub date -
Sep 29, 1998
filing date -
Sep 30, 1997
priority date (Note) -
Expired
status (Latency Note)
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Abstract
An inductively coupled type dry etching apparatus has an RF antenna disposed on a dielectric wall forming the ceiling of a process chamber. The process chamber is divided into a plasma generating space and a processing space by the partition of an intermediate electrode. A susceptor is arranged in the processing space, for mounting a semiconductor wafer thereon. The partition has openings for the plasma generating space and the processing space to communicate with each other. The partition is formed of a plurality of conductive beams radially arranged. The conductive beams extend in directions perpendicular to the direction of an electric field generated by the RF antenna, and have warps to absorb thermal stress.
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