Method for rapid thermal processing (RTP) of silicon substrates
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United States of America Patent
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Aug 8, 2000
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N/A
app pub date -
Jul 1, 1997
filing date -
Jul 1, 1997
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Abstract
A method of rapid thermal processing (RTP) of a silicon substrate is presented, where a very low partial pressure of reactive gas is used to control etching and growth of oxides on the silicon surface.
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