Apparatus for pulling a single crystal
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United States of America Patent
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Aug 8, 2000
Issued Date -
N/A
app pub date -
Aug 11, 1999
filing date -
Feb 23, 1996
priority date (Note) -
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status (Latency Note)
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Abstract
A method and apparatus for pulling a single crystal by, for example, the Czochralski method where a melt is heated by heaters arranged around, or around and below a crucible. Auxiliary heaters are provided above the crucible to directly heat the melt to supplement the heaters arranged around, or around and below the crucible, so asto reduce the power of the heaters arranged around, or around and below the crucible. According to the method, a single crystal is pulled under the condition of the local highest temperature of a quartz crucible of 1600.degree. C. or less.
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