Semiconductor device having a plurality of parallel drift regions
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United States of America Patent
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Aug 1, 2000
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N/A
app pub date -
Jan 21, 1997
filing date -
Jan 22, 1996
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Abstract
A semiconductor device has a drift region in which a drift current flows if it is in the ON mode and which is depleted if it is in the OFF mode. The drift region is formed as a structure having a plurality of first conductive type divided drift regions and a plurality of second conductive type compartment regions in which each of the compartment regions is positioned among the adjacent drift regions in parallel to make p-n junctions, respectively.
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