Method of making IC devices having stable CVD titanium nitride films
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United States of America Patent
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Aug 1, 2000
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N/A
app pub date -
Mar 4, 1998
filing date -
Jul 24, 1997
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Abstract
A method of forming a CVD nitride (e.g., titanium nitride) film on a substrate. The as-deposited nitride film is treated by a plasma of a high power density (preferably between approximately 200 W and 300 W) for a prolonged duration of time (preferably between approximately 32 s and 52 s) to reduce the tendency of the resistance and thickness of the as-deposited film to change because of either time of exposure to atmosphere or subsequent processing steps.
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