Method of fabricating capacitor of semiconductor device
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United States of America Patent
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Aug 1, 2000
Grant Date -
N/A
app pub date -
Jun 17, 1998
filing date -
Jun 19, 1997
priority date (Note) -
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Abstract
A method of fabricating a capacitor of a semiconductor device is disclosed including the step of forming a lower electrode layer on a semiconductor substrate, and a dielectric on the lower electrode layer, a part of the lower electrode layer, a part of the upper electrode layer adjacent to the dielectric of the capacitor including the upper electrode on the dielectric, or all of them containing oxygen.
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