Silicon crystal, and device and method for manufacturing same
Number of patents in Portfolio can not be more than 2000
United States of America Patent
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Aug 1, 2000
Grant Date -
N/A
app pub date -
Jun 5, 1998
filing date -
Jun 6, 1997
priority date (Note) -
Expired
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Abstract
A germanium layer 19 is melted on top of a starting polycrystalline silicon ingot 18, at a temperature below the melting point of pure silicon. Silicon is dissolved at the interface and floats to the top of the germanium melt to form a silicon melt layer 11, from which a crystal 20 can be drawn. The process permits the production of large diameter crystal with low oxygen content and no more than one percent germanium.
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