MOS transistors having vertical current flow
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United States of America Patent
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Jul 25, 2000
Issued Date -
N/A
app pub date -
Aug 5, 1994
filing date -
Oct 16, 1990
priority date (Note) -
Expired
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Abstract
The process provides first for the accomplishment of low-doping body regions at the sides and under a gate region and then the accomplishment of high-doping body regions inside said low-doping body regions and self-aligned with said gate region. There is thus obtained an MOS power transistor with vertical current flow which has high-doping body regions self-aligned with said gate region and with a reduced junction depth.
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