Method and apparatus for film formation by chemical vapor deposition
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United States of America Patent
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Jul 18, 2000
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N/A
app pub date -
Mar 10, 1997
filing date -
Dec 22, 1994
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Abstract
Powdery Cr(CO).sub.6 is stored in a reservoir, into which Ar gas, under flow rate control by a flow rate controller, is introduced. On the other hand, He gas, whose molecular weight differs from that of Ar gas, is also introduced into the reservoir under flow rate control by another flow rate controller. These Ar and He gases are used as carrier gases for feeding a reactive gas into a chamber. The reservoir sublimates the powdery Cr(CO).sub.6 stored therein. The Cr(CO).sub.6 obtained by sublimation is carried by the Ar and He gases which are introduced into the reservoir, and supplied onto a substrate in the chamber. The substrate is irradiated with a laser beam. This irradiation with the laser beam decomposes the Cr(CO).sub.6 gas to form a film of metallic chromium on the substrate.
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