Methods of forming semiconductor-on-insulator devices including buried layers of opposite conductivity type
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United States of America Patent
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Jul 11, 2000
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app pub date -
Apr 27, 1999
filing date -
Oct 17, 1996
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Abstract
Semiconductor-on-insulator (SOI) devices are fabricated by forming first and second semiconductor layers of opposite conductivity types, at a first face of a substrate. An insulating layer is formed on the first and second semiconductor layers. A trench is formed through the insulating layer extending between the first and second semiconductor layers and extending into the substrate. A portion of the substrate is removed from a second face which is opposite the first face, to define respective first and second active regions on the respective first and second semiconductor layers.
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