Organic low-dielectric constant films deposited by plasma enhanced chemical vapor deposition
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United States of America Patent
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Jul 4, 2000
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app pub date -
Feb 27, 1998
filing date -
Feb 27, 1998
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Abstract
A method of forming a low-dielectric constant film on a substrate. The method includes placing the substrate within a plasma processing chamber. Gas within the chamber is removed. A combination of hydrocarbon and hydrofluorocarbon gasses are flowed into the chamber. A high density plasma is created in the chamber. The high density plasma is extinguished. Finally, all gas is removed from the chamber. The method can additionally include a heating step after the film has been formed.
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