Plasma processing apparatus
Number of patents in Portfolio can not be more than 2000
United States of America Patent
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Jun 27, 2000
Grant Date -
N/A
app pub date -
Oct 15, 1998
filing date -
Oct 21, 1997
priority date (Note) -
Expired
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Abstract
An inductively coupled type dry etching apparatus has an RF antenna disposed on the ceiling wall of a process chamber. A susceptor is arranged in the process chamber, for mounting a semiconductor wafer thereon. The ceiling wall has a matrix of alumina ceramic, and heat generating elements of a salt of a transition metal oxide, which are dispersed in the matrix and capable of self-generating heat by an RF electric field.
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