Method for radiofrequency wave etching
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United States of America Patent
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Jun 20, 2000
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N/A
app pub date -
Sep 25, 1995
filing date -
Sep 25, 1995
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Abstract
A method for selective controlled etching of a material particularly by sequentially switching between two (2) or more modes of radiofrequency waves and/or by distance from a source of the microwaves. The modes and/or distance are selected depending upon the surface of the material to be etched. The etching is rapidly conducted at 0.5 mtorr to 10 torr, preferably using microwave plasma etching.
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