Methods for forming shallow junctions in semiconductor wafers
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United States of America Patent
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May 30, 2000
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N/A
app pub date -
Sep 16, 1997
filing date -
Sep 16, 1997
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Abstract
A method for forming a shallow junction in a semiconductor wafer includes the steps of implanting a dopant material, such as boron, into the wafer, selecting a fluorine dose and energy corresponding to the dopant material implant to produce a desired junction depth less than 1000 angstroms and a desired sheet resistance, and implanting fluorine into the semiconductor wafer at the selected dose and energy. The dopant material is activated by thermal processing of the semiconductor wafer at a selected temperature for a selected time to form the shallow junction. Residual fluorine and wafer damage may be removed by low temperature annealing following the step of activating the dopant material.
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