Method of manufacturing a semiconductor wafer
Number of patents in Portfolio can not be more than 2000
United States of America Patent
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-
May 23, 2000
Grant Date -
N/A
app pub date -
Nov 19, 1998
filing date -
Nov 21, 1997
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A sliced wafer 1a is obtained by cutting it off from a semiconductor ingot. The rear and front surfaces of the sliced wafer 1a are flattened by the first double side simultaneous grinding process so as to remove unevenness 12a. The ground rear and front surfaces of the sliced wafer 1a whose unevenness 12a has been removed are subject to the second double side simultaneous grinding process. The flattened back side surface of the sliced wafer 1b is sucked so as to chamfer the outer peripheral portion 1b of the sliced wafer 1b. Then, the surface of the chamfered wafer 1c is etched.
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