Semiconductor integrated circuit device

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 6064606
SERIAL NO

09001514

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Abstract

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A nonvolatile storage element of single-layer gate structure constructed by arranging a floating gate formed of a conductive layer to partly overlap with a control gate formed of a diffused layer is provided with a barrier layer covering a part or the whole of the surface of the floating gate. Such nonvolatile storage elements are used for redundancy control of defects or change of functions.

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Patent Owner(s)

Patent OwnerAddress
RENESAS ELECTRONICS CORPORATION2-24 TOYOSU 3-CHOME KOTO-KU TOKYO 135-0061

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kuroda, Kenichi Tachikawa, JP 126 2341
Matsuo, Akinori Higashiyamato, JP 26 429
Moriuchi, Hisahiro Tanashi, JP 13 135
Sakaguchi, Jiroh Tama, JP 10 121
Shirai, Masaki Sayama, JP 10 103
Takeda, Toshifumi Kodaira, JP 29 550
Yoshida, Shoji Akishima, JP 66 1072

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