P-channel memory cell and method for forming the same
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United States of America Patent
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May 9, 2000
Grant Date -
N/A
app pub date -
Mar 4, 1996
filing date -
Mar 3, 1995
priority date (Note) -
Expired
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Abstract
The present invention concerns an electrically programmable and erasable non-volatile memory cell having a traditional structure but being inverted in the conductivity type of the component elements and lacking the second source diffusion.
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