Semiconductor memory device having multilayer group IV nanocrystal quantum dot floating gate and method of manufacturing the same
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United States of America Patent
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May 9, 2000
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app pub date -
May 20, 1998
filing date -
May 21, 1997
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Abstract
The semiconductor device comprises a first insulating layer formed on the semiconductor substrate, at least one double-deck semiconductor nanocrystal formed on the first insulating layer, the at least one double-deck semiconductor nanocrystal comprising a first semiconductor nanocrystal and a second semiconductor nanocrystal stacked one upon the other via a second insulating layer, and a third insulating layer selectively formed on the first insulating layer so as to cover the at least one double-deck semiconductor nanocrystal.
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