Process for cleaning the interior of semiconductor substrate
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United States of America Patent
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May 9, 2000
Grant Date -
N/A
app pub date -
Apr 3, 1998
filing date -
Apr 3, 1997
priority date (Note) -
Expired
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Abstract
A process of cleaning the interior of a semiconductor substrate containing metallic impurities therein is provided. The semiconductor substrate is heated, with one side or the both sides thereof being in contact with a melt of a metal or an inorganic salt, at a high temperature such that the melt does not react with these semiconductor and the semiconductor is not melted. By this process, the impurities present inside the substrate are removed out of the substrate and the interior thereof is cleaned.
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