Silicon carbide semiconductor device and manufacturing method thereof
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United States of America Patent
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May 2, 2000
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N/A
app pub date -
Mar 4, 1998
filing date -
Mar 5, 1997
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Abstract
In a silicon carbide semiconductor device such as a trench gate type power MOSFET, the film thickness and the impurity concentration of a thin film silicon carbide semiconductor layer formed on a trench side face to constitute an accumulation-type channel-forming region and enable the device to operate with a low gate voltage, low on-resistance and low power loss are set so that on impression of a reverse bias voltage a pn junction between a P-type epitaxial layer and an n.sup.- -type epitaxial layer undergoes avalanche breakdown before the thin film silicon carbide semiconductor layer undergoes punch-through. By this means it is possible to obtain a target high source-drain withstand voltage.
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