Grazing incident angle processing method for microelectronics layer fabrication

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United States of America Patent

PATENT NO 6054390
SERIAL NO

08964810

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Abstract

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A method for fabricating a microelectronics fabrication. There is first provided a substrate employed within a microelectronics fabrication. There is then formed horizontally spaced over the substrate a plurality of patterned microelectronics structures. There is then formed over the substrate and the plurality of patterned microelectronics structures a microelectronics layer. The microelectronics layer has a first region of the microelectronics layer interposed between the plurality of patterned microelectronics structures and a second region of the microelectronics layer not interposed between the plurality of microelectronics structures. Finally, there is processed through a grazing angle method the microelectronics layer, where the grazing angle method processes substantially all of the second region of the microelectronics layer without substantially processing the first region of the microelectronics layer. There is also disclosed a apparatus through which may be practiced the grazing angle method, where the apparatus employs a charged particle beam within the grazing angle method and where the charged particle beam is spirally magnetically constrained by a magnetic field perpendicular to the substrate.

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Patent Owner(s)

Patent OwnerAddress
CHARTERED SEMICONDUCTOR MANUFACTURING PTE LTD60 WOODLANDS INDUSTRIAL PARK D STREET 2 SINGAPORE 738406

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Lin, Charles Singapore, SG 49 453
Lin, Yih-Shung Singapore, SG 40 626
Liu, Erzhuang Singapore, SG 9 153

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