Method of surface treatment of semiconductor substrates
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United States of America Patent
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Apr 18, 2000
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N/A
app pub date -
Aug 1, 1997
filing date -
Aug 1, 1996
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Abstract
This invention relates to methods for treatment of semiconductor substrates and in particular a method of etching a trench in a semiconductor substrate in a reactor chamber using alternatively reactive ion etching and depositing a passivation layer by chemical vapour deposition, wherein one or more of the following parameters: gas flow rates, chamber pressure, plasma power, substrate bias, etch rate, deposition rate, cycle time and etching/deposition ratio vary with time.
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