Multiple metallization structure for a reflection type liquid crystal display
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United States of America Patent
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Apr 11, 2000
Grant Date -
N/A
app pub date -
Jul 11, 1997
filing date -
Jul 12, 1996
priority date (Note) -
Expired
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Abstract
In a semiconductor chip for Si chip based liquid crystal having insulating films and interconnection layers formed on a semiconductor substrate, a thin interconnection layer made of TiN/Ti having strong erosion resistance is formed on an uppermost interlayer insulating film having a flat surface to substantially expose the thin uppermost interconnection layer to the surface of the chip, the uppermost insulating film is covered with a protection film made of p-SiN and a thin insulating film having a mirror-like flat surface is formed on the uppermost interconnection layer.
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