DMOS transistor protected against "snap-back"
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United States of America Patent
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-
Mar 28, 2000
Issued Date -
N/A
app pub date -
Nov 7, 1997
filing date -
Nov 11, 1996
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
The DMOS transistor includes an n drain region, a p body region which forms, with the drain region, a junction having at least one edge portion with a small radius of curvature, an n+ source region which delimits a channel in the body region, p+ body contact regions, a gate electrode, a source and body electrode, and a drain electrode. To prevent the 'snap-back' phenomenon when the junction is reverse biased with the source, body and gate electrodes short-circuited, a p+ region is associated with each of the edge portions having a small radius of curvature and is arranged so as to be closer to the associated edge portion than any part of the source region.
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