Photodetector involving a MOSFET having a floating gate
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United States of America Patent
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Mar 28, 2000
Grant Date -
N/A
app pub date -
May 5, 1998
filing date -
Jun 30, 1995
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Abstract
A photodetector comprising a photoemissive surface capable of liberating photoelectrons. Photoelectrons are detected by a MOSFET having a floating gate, which is suitably charged before measurement in such a way that photoelectrons can cause a change in charge of the floating gate. The detected change indicates the amount of light received by the detector.
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