Image sensor having self-aligned silicide layer
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United States of America Patent
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Mar 21, 2000
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N/A
app pub date -
Jun 29, 1999
filing date -
Jun 29, 1998
priority date (Note) -
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Abstract
The present invention is to provide a CMOS image sensor, including a photo-sensing region, in which a buried photodiode is formed, for sensing light from an object; a plurality of transistors electrically coupled to the buried photodiode; silicide layers formed on gates and heavily doped regions except the photo-sensing region; and a plurality of insulating layer patterns which are provided by patterning an insulating layer, wherein the insulating layer patterns include: insulating spacers formed on sidewalls of the gates, which are respectively provided for the plurality of transistors; and a passivation layer formed on the photo-sensing region and on a sidewall of neighboring one of the gates.
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