Intergrated field effect transistor device for high power and voltage amplification of RF signals
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United States of America Patent
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Mar 14, 2000
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N/A
app pub date -
Feb 17, 1998
filing date -
Feb 17, 1998
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Abstract
An integrated transistor device operates with a linear triode vacuum tube like characteristic with a very low output impedance and a large interaction between the gate and drain potentials. The drain current of a first transistor is connected directly to the source of a second transistor which has a low input impedance matching the output impedance of the first transistor. The gate of the second transistor is held at a positive potential and functions to provide isolation of the varying drain signal from the drain of the first transistor and to provide a high impedance at the output terminal. This device structure provides high input impedance, high current gain, high output impedance and a linear operating characteristic.
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