Contact structure and memory element incorporating the same
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United States of America Patent
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Feb 29, 2000
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N/A
app pub date -
Jun 18, 1997
filing date -
Jun 18, 1997
priority date (Note) -
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Abstract
Annular and linear contact structures are described which exhibit a greatly reduced susceptibility to process deviations caused by lithographic and deposition variations than does a conventional circular contact plug. In one embodiment, a standard conductive material such as carbon or titanium nitride is used to form the contact. In an alternative embodiment, a memory material itself is used to form the contact. These contact structures may be made by various processes, including chemical mechanical planarization and facet etching.
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