Method of producing intrinsic p-type HgCdTe using CdTe capping layer
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United States of America Patent
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Feb 29, 2000
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N/A
app pub date -
Aug 13, 1993
filing date -
Aug 13, 1993
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Abstract
A hybrid focal plane array has Hg.sub.1-x Cd.sub.x Te junction photodiodes formed in a substrate of HgCdTe which is capped by a layer of Te-rich CdTe. Type conversion of a low metal vacancy HgCdTe substrate to p-type is performed by annealing the capped substrate at a temperature sufficient to support interdiffusion between the Te-rich CdTe capping layer and the HgCdTe substrate. Use of the CdTe capping layer with a slight excess Te maintains the surface of the HgCdTe substrate in a Te-rich phase condition.
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